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PBSS5580PA 80 V, 4 A PNP low VCEsat (BISS) transistor Rev. 01 -- 6 May 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement: PBSS4580PA. 1.2 Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Exposed heat sink for excellent thermal and electrical conductivity Leadless small SMD plastic package with medium power capability 1.3 Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - -80 V IC collector current - - -4 A ICM peak collector current single pulse; - - -5 A tp 1 ms RCEsat collector-emitter IC = -4 A; [1] - 65 105 m saturation resistance IB = -200 mA [1] Pulse test: tp 300 s; 0.02. NXP Semiconductors PBSS5580PA 80 V, 4 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 base 3 3 2 emitter 3 collector 1