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2SA1104 Silicon Epitaxial Planar Transistor GENERAL DESCRIPTION Silicon PNP high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose MT-100 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP MAX UNIT VCESM Collector-emitter voltage peak value VBE = 0V - 120 V VCEO Collector-emitter voltage (open base) - 120 V IC Collector current (DC) - 8 A ICM Collector current peak value - A Ptot Total power dissipation Tmb 25 - 80 W VCEsat Collector-emitter saturation voltage IC = 3.5A; IB = 0.35A - 2 V VF Diode forward voltage IF = 3.5A 1.5 2.0 V tf Fall time - s LIMITING VALUES SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCESM Collector-emitter voltage peak value VBE = 0V - 120 V VCEO Collector-emitter voltage (open base) - 120 V VEBO Emitter-base oltage (open colloctor) 5 V IC Collector current (DC) - 8 A IB Base current (DC) - 2 A Ptot Total power dissipation Tmb 25 - 80 W Tstg Storage temperature -55 150 Tj Junction temperature - 150 ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS TYP MAX UNIT ICBO Collector-base cut-off current VCB=100V - 0.2 mA IEBO Emitter-base cut-off current VEB=5V - 0.2 mA V(BR)CEO Collector-emitter breakdown voltage IC=1mA 120 V VCEsat Collector-emitter saturation voltages IC = 3.5A; IB = 0.35A - 2 V hFE D