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STB160NF03L N-CHANNEL 30V - 0.0021 - 160A D2PAK STripFETTM POWER MOSFET TYPE VDSS RDS(on) ID STB160NF03L 30 V < 0.0030 160 A s TYPICAL RDS(on) = 0.0021 s LOW THRESHOLD DRIVE s ULTRA LOW ON-RESISTANCE s VERY LOW GATE CHARGE s 100% AVALANCHE TESTED 3 1 DESCRIPTION D2PAK This Power MOSFET is the latest development of (TO-263) STMicroelectronics unique "Single Feature SizeTM" strip-based process. The resulting tran- sistor shows extremely high packing density with ultra low on-resistance, superior switching charac- INTERNAL SCHEMATIC DIAGRAM teristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. This device is particularly suitable for high current, low voltage switching application where efficiency is crucial. APPLICATIONS s BUCK CONVERTERS IN HIGH PERFORMANCE TELECOM AND VRMs s DC-DC CONVERTERS ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 30 V VDGR Drain-gate Voltage (RGS = 20 k) 30 V VGS Gate- source Voltage