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File name: | pd85035-e_pd85035s-e.pdf [preview pd85035-e pd85035s-e] |
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File name pd85035-e_pd85035s-e.pdf PD85035-E PD85035S-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features Excellent thermal stability Common source configuration POUT = 35 W with 14.9 dB gain @ 870 MHz / 13.6 V Plastic package PowerSO-10RF ESD protection (formed lead) In compliance with the 2002/95/EC1 European directive Description The PD85035-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It PowerSO-10RF operates at 13.6 V in common source mode at (straight lead) frequencies of up to 1 GHz. PD85035-E boasts the excellent gain, linearity and reliability of ST's latest LDMOS technology mounted in the first true Figure 1. Pin connection SMD plastic RF power package, PowerSO-10RF. Source PD85035-E's superior linearity performance makes it an ideal solution for car mobile radio. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC Gate Drain approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294) Table 1. Device summary Order codes Package Packing PD85035-E PowerSO-10RF (formed lead) Tube PD85035S-E PowerSO-10RF (straight lead) Tube PD85035TR-E PowerSO-10RF (formed lead) Tape and reel PD85035STR-E PowerSO-10RF (straight lead) Tape and reel August 2008 Rev 2 1/15 www.st.com 15 Contents PD85035-E, PD85035S-E Contents 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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