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PBHV9040T 500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor Rev. 02 -- 15 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8540T. 1.2 Features I High voltage I Low collector-emitter saturation voltage VCEsat I High collector current capability IC and ICM I High collector current gain (hFE) at high IC I AEC-Q101 qualified 1.3 Applications I Electronic ballast for fluorescent lighting I LED driver for LED chain module I LCD backlighting I High Intensity Discharge (HID) front lighting I Automotive motor management I Hook switch for wired telecom I Switch mode power supply 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCESM collector-emitter peak VBE = 0 V - - -500 V voltage VCEO collector-emitter voltage open base - - -400 V IC collector current - - -0.25 A hFE DC current gain VCE = -10 V; 100 200 - IC = -50 mA NXP Semiconductors PBHV9040T 500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 base 3 3 2 emitter 3 collector 1 1 2 2 sym013 3. Ordering information Table 3. Ordering inform