. Electronic Components Datasheets am82731-025 free download

File name am82731-025.pdf

AM82731-025 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . LOW PARASITIC, DOUBLE LEVEL MET- . . AL DESIGN REFRACTORY/GOLD METALLIZATION . . EMITTER SITE BALLASTED 3:1 VSWR @ 1 dB OVERDRIVE . . LOW RF THERMAL RESISTANCE INPUT/OUTPUT IMPEDANCE MATCHING .400 x .400 2LFL (S036) . . OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 25 W MIN. WITH 6.2 dB GAIN ORDER CODE hermetically sealed BRANDING AM82731-025 82731-25 DESCRIPTION The AM82731-025 device is a high power silicon bi- PIN CONNECTION polar NPN transistor specifically designed for S-Band radar pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and can withstand a 3:1 output VSWR with a +1dB input over drive. Low RF thermal resistance, refrac- tory/gold metallization, and automatic wire bonding techniques ensure high reliability and product con- sistency (including phase characteristics). The AM82731-025 is supplied in the Hermetic Met- al/Ceramic package with internal Input/Output im- 1. Collector 3. Emitter pedance matching circuitry, and is intended for mili- tary and other high reliability applications. 2. Base 4. Base ABSOLUTE MAXIMUM RATINGS (T case = 25