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File name: | stp9nb50.pdf [preview stp9nb50] |
Size: | 356 kB |
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Mfg: | . Electronic Components Datasheets |
Model: | stp9nb50 🔎 |
Original: | stp9nb50 🔎 |
Descr: | . Electronic Components Datasheets Active components Transistors ST stp9nb50.pdf |
Group: | Electronics > Components > Transistors |
Uploaded: | 26-05-2020 |
User: | Anonymous |
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File name stp9nb50.pdf STP9NB50 STP9NB50FP N-CHANNEL 500V - 0.75 - 8.6 A TO-220/TO-220FP PowerMeshTM MOSFET TYPE VDSS RDS(on) ID STP9NB50 500 V < 0.85 8.6 A STP9NB50FP 500 V < 0.85 4.9 A s TYPICAL RDS(on) = 0.75 s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED 3 3 s VERY LOW INTRINSIC CAPACITANCES 2 2 1 1 s GATE CHARGE MINIMIZED TO-220 TO-220FP DESCRIPTION Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprieraty edge termi- INTERNAL SCHEMATIC DIAGRAM nation structure, gives the lowest R DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteris- tics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP9NB50 STP9NB50FP VDS Drain-source Voltage (VGS = 0) 500 V VDGR Drain-gate Voltage (RGS = 20 k) 500 V VGS Gate- source Voltage |
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