. Electronic Components Datasheets bdy90 free download

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BDY90 HIGH CURRENT NPN SILICON TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BDY90 is a silicon epitaxial planar NPN power transistors in Jedec TO-3 metal case. They 1 are intented for use in switching and linear 2 applications in military and industrial equipment. TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Value V CBO Collector-base Voltage (I E = 0) 120 V V CEV Collector-emitter Voltage (V BE = -1.5V) 120 V V CEO Collector-emitter Voltage (I B = 0) 100 V V EBO Emitter-base Voltage (I C = 0) 6 V IC Collector Current 10 A I CM Collector Peak Current (repetitive) 15 A IB Base Current 2 A P tot Total Dissipation at T c 25 o C 60 W o T stg Storage Temperature -65 to 175 C o Tj Max. Operating Junction Temperature 175 C June 1997 1/4 BDY90 THERMAL DATA o R thj-case Thermal Resistance Junction-case Max 2.5 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CBO Collector Cut-off V CE = V CBO 1 mA Current (I E = 0) I CEV Collector Cut-off V CE = V CEV 1 mA Current (V BE = -1.5V) T case = 150 o C V CE = V CEV 3 mA I EBO Emitter Cut-off Current V EB = 6 V 1 mA (I C = 0) V CEO(sus) Collector-Emitter I C = 100 mA 100 V Sustaining Voltage