. Electronic Components Datasheets 2sd1403 free download

File name 2sd1403.pdf

2SD1403 Silicon Diffused Power Transistor GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,prim- arily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA MT-100 SYMBOL PARAMETER CONDITIONS TYP MAX UNIT VCESM Collector-emitter voltage peak value VBE = 0V - 1500 V VCEO Collector-emitter voltage (open base) - 600 V IC Collector current (DC) - 6 A ICM Collector current peak value - 12 A Ptot Total power dissipation Tmb 25 - 120 W VCEsat Collector-emitter saturation voltage IC =4.0A; IB = 1.0A - 5.0 V Icsat Collector saturation current f = 16KHz - - A VF Diode forward voltage IF = 5.0A 1.6 2.0 V tf Fall time ICsat = 5.0A; f = 16KHz 0.4 - s LIMITING VALUES SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCESM Collector-emitter voltage peak value VBE = 0V - 1500 V VCEO Collector-emitter voltage (open base) - 600 V IC Collector current (DC) - 6 A ICM Collector current peak value - 12 A IB Base current (DC) - - A IBM Base current peak value - - A Ptot Total power dissipation Tmb 25 - 120 W Tstg Storage temperature -55 150 Tj Junction temperature - 150 ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS