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STS9NF30L N-CHANNEL 30V - 0.015 - 9A SO-8 LOW GATE CHARGE STripFETTM II POWER MOSFET TYPE VDSS RDS(on) ID STS9NF30L 30 V <0.020 9A s TYPICAL RDS(on) = 0.020 @ 5 V s TYPICAL Qg = 9.5 nC @ 4.5 V s OPTIMAL RDS(on) x Qg TRADE-OFF s CONDUCTION LOSSES REDUCED s SWITCHING LOSSES REDUCED DESCRIPTION This application specific Power MOSFET is the second SO-8 generation of STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and INTERNAL SCHEMATIC DIAGRAM high efficiency are of paramount importance. APPLICATIONS s SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS FOR MOBILE PCS ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 30 V VDGR Drain-gate Voltage (RGS = 20 k) 30 V VGS Gate- source Voltage