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PBLS6022D 60 V, 1.5 A PNP BISS loadswitch Rev. 01 -- 13 August 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor- Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. 1.2 Features I Low VCEsat (BISS) and resistor-equipped transistor in one package I Low threshold voltage (<1 V) compared to MOSFET I Space-saving solution I Reduction of component count I AEC-Q101 qualified 1.3 Applications I Supply line switches I Battery charger switches I High-side switches for LEDs, drivers and backlights I Portable equipment 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit TR1; PNP low VCEsat transistor VCEO collector-emitter voltage open base - - -60 V IC collector current - - -1.5 A ICM peak collector current single pulse; - - -3 A tp 1 ms RCEsat collector-emitter saturation IC = -1.5 A; [1] - 110 175 m resistance IB = -100 mA TR2; NPN resistor-equipped transistor VCEO collector-emitter voltage open base - - 50 V IO output current - - 100 mA R1 bias resistor 1 (input) 3.3 4.7 6.1 k R2/R1 bias resistor ratio 0.8 1 1.2 [1] Pulse test: tp 300