. Electronic Components Datasheets bsh112-01 free download

File name bsh112-01.pdf

BSH112 N-channel enhancement mode field-effect transistor M3D088 Rev. 01 -- 25 August 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOSTM1 technology. Product availability: BSH112 in SOT23. 2. Features s TrenchMOSTM technology s Very fast switching s Logic level compatible s Subminiature surface mount package s Gate-source ESD protection diodes. 3. Applications c s Relay driver c s High speed line driver s Logic level translator. 4. Pinning information Table 1: Pinning - SOT23, simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) 3 d 2 source (s) 3 drain (d) g 03ab44 03ab60 s 1 2 SOT23 N-channel MOSFET 1. TrenchMOS is a trademark of Royal Philips Electronics. Philips Semiconductors BSH112 N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit VDS drain-source voltage (DC) Tj = 25 to 150