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PBSS4041NT 60 V, 3.8 A NPN low VCEsat (BISS) transistor Rev. 01 -- 31 January 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4041PT. 1.2 Features Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 60 V IC collector current - - 3.8 A ICM peak collector current single pulse; - - 8 A tp 1 ms RCEsat collector-emitter IC = 3 A; [1] - 46 66 m saturation resistance IB = 300 mA [1] Pulse test: tp 300 s; 0.02. NXP Semiconductors PBSS4041NT 60 V, 3.8 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 base 3 3 2 emitter 3 collector 1 1 2 2