. Electronic Components Datasheets m8550 to-92 free download

File name m8550_to-92.pdf

M8550(PNP) TO-92 Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -800 mA Dimensions in inches and (millimeters) PC Collector Power Dissipation 625 mW TJ Junction Temperature 125 Tstg Storage Temperature -55-125 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -100A, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO* IC= -0.1mA , IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE= -100A, IC=0 -6 V Collector cut-off current ICBO VCB= -35V , IE=0 -0.1 A Collector cut-off current ICEO VCE= -20V , IB=0 -0.1 A hFE(1) VCE=-1V, IC=-5mA 45 DC current gain hFE(2) VCE=-1V, IC=-100mA 80 400 hFE(3) VCE=-1V, IC=-800mA 40 Collector-emitter saturation voltage VCE(sat) IC= -800mA, IB=-80mA -0.5 V Base-emitter saturation voltage VBE(sat) IC=-800mA, IB=-80mA -1.2 V VCE=-6V, IC= -20mA Transition frequency fT 150 MHz f=30MHz *Pulse Test: pulse width 300