. Electronic Components Datasheets bc327 free download

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SEMICONDUCTOR BC327 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES High Current : IC=-800mA. DC Current Gain : hFE=100 630 (VCE=-1V, Ic=-100mA). For Complementary with NPN type BC337. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5 V Collector Current IC -800 mA Base Current IB -200 mA Emitter Current IE 800 mA Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-45V, IE=0 - - -100 nA DC Current Gain (Note) hFE VCE=-1V, IC=-100mA 100 - 630 Collector-Emitter Saturation Voltage VCE(sat) IC=-500mA, IB=-50mA - - -0.7 V Base-Emitter Voltage VBE(ON) VCE=-1V, IC=-300mA - - -1.2 V Transition Frequency fT VCE=-5V, IC=-10mA, f=100MHz - 100 - MHz Collector Output Capacitance Cob VCB=-10V, f=1MHz, IE=0 - 16 - pF Note : hFE Classification none:100 630, 16:100 250, 25:160 400, 40:250 630 2008. 4. 24 Revision No : 3 1/2 BC327 2008. 4. 24 Revision No : 3 2/2