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Now downloading free:Philips phb130n03t 1

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Electronic components, integrated circuits, semiconductor - datasheets and schematics

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Descr: . Electronic Components Datasheets Active components Transistors Philips phb130n03t_1.pdf
Group:Electronics > Components > Transistors
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Philips Semiconductors Product specification TrenchMOSTM transistor PHB130N03T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 30 V suitable for surface mounting using ID Drain current (DC)1 75 A 'trench' technology. The device Ptot Total power dissipation 188 W features very low on-state resistance Tj Junction temperature 175

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