Samsung tip100 free download

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NPN EPITAXIAL TIP100/101/102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE=4V, IC=3A TO-220 COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE Complementary to TIP105/106/107 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Emitter Voltage : TIP100 VCBO 60 V 1.Base 2.Collector 3.Emitter : TIP101 80 V : TIP102 100 V Collector Emitter Voltage : TIP100 VCEO 60 V : TIP101 80 V : TIP102 100 V Emitter-Base Voltage VEBO 5 V Collector Current (DC) IC 8 A Collector Current (Pulse) IC 15 A Base Current (DC) IB 1 A ) Collector Dissipation ( T A=5 PC 2 W Collector Dissipation ( T =5) PC 80 W C Junction Temperature TJ 150 Storage Temperature T STG -65 ~ 150 ELECTRICAL CHARACTERISTICS (T C =25) Characteristic Symbol Test Conditions Min Max Unit Collector Emitter Sustaining Voltage VCEO(sus) : TIP100 IC = 30mA, IB = 0 60 V : TIP101 80 V : TIP102 100 V Collector Cutoff Current : TIP100 ICEO VCE = 30V, IB = 0 50 uA : TIP101 VCE = 40V, IB = 0 50 uA : TIP102 VCE = 50V, IB = 0 50 uA Collector Cutoff Current : TIP100 ICBO VCE = 60V, IE = 0 50 uA : TIP101 VCE = 80V, IE = 0 50 uA