Secos 2sc2873 free download

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2SC2873 NPN Silicon Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product SOT-89 FEATURES Low saturation voltage High speed switching time Complementary to 2SA1213 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V REF. Millimeter REF. Millimeter Min. Max. Min. Max. VEBO Emitter-Base Voltage 5 V A 4.4 4.6 G 3.00 REF. IC Collector Current -Continuous 2 A B 4.05 4.25 H 1.50 REF. C 1.50 1.70 I 0.40 0.52 PC Collector Power Dissipation 500 mW D 1.30 1.50 J 1.40 1.60 E 2.40 2.60 K 0.35 0.41 TJ Junction Temperature 150 F 0.89 1.20 L 5 q TYP. Tstg Storage Temperature -55-150 M 0.70 REF. ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100A, IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=100A , IC=0