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2N5550(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Switching and amplification in high voltage Applications such as telephony Low current(max. 600mA) High voltage(max.160V) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 160 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.6 A PC Collector Power Dissipation 0.625 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100A,IE=0 160 V Collector-emitter breakdown V(BR)CEO IC=1mA, IB=0 140 V voltage Emitter-base breakdown voltage V(BR)EBO IE=10A, IC=0 6 V Collector cut-off current ICBO VCB=100V,IE=0 0.1 A Emitter cut-off current IEBO VEB=4V, IC=0 0.05 A hFE(1) VCE=5V,IC=1mA 60 DC current gain hFE(2) VCE=5V,IC =10mA 60 250 hFE(3) VCE=5V,IC=50mA 20 IC= 10mA, IB=1mA 0.15 Collector-emitter saturation voltage VCEsat V IC= 50mA, IB=5mA 0.25 IC= 10mA, IB=1mA 1 Base-emitter saturation voltage