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CZT127 SOT-223 Transistor(PNP) 1. BASE 2. COLLECTOR SOT-223 1 3. EMITTER Features Complementary to CZT122 Silicon Power Darlington Transistors Low speed switching and amplifier applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -5 A PC Collector Power Dissipation 1 W Tj Junction Temperature 150 Tstg Storage Temperature -65-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-1m A,IE=0 -100 V Collector-emitter breakdown voltage V(BR)CEO IC=-30mA,IB=0 -100 V Collector cut-off current ICBO VCB=-100V,IE=0 -200 uA Base cut-off current ICEO VCE=-50V,IB=0 -500 uA Emitter cut-off current IEBO VEB=-5V,IC=0 -2 mA hFE(1) VCE=-3V,IC=-0.5A 1000 DC current gain hFE(2) VCE=-3V,IC=-3A 1000 VCE(sat)1 IC=-3A,IB=-12mA -2 V Collector-emitter saturation voltage VCE(sat)2 IC=-5A,IB=-20mA -4 V Base-emitter voltage VBE(on) VCE=-3V,IC=-3A -2.5 V Transition frequency fT VCE=-4V,IC=-3A,f=1MHz 4 MHz Collector output capacitance Cob VCB=-10V, IE=0, f=1.0MHz 200 pF CZT127 SOT-223 Transistor(PNP) Typical Characteristics TypicalCharacte