ST std1nb80-1 free download

File name std1nb80-1.pdf

STD1NB80-1 N - CHANNEL 800V - 16 - 1A - IPAK PowerMESHTM MOSFET PRELIMINARY DATA TYPE V DSS R DS(on) ID STD1NB80-1 800 V < 20 1A s TYPICAL RDS(on) = 16 s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED 3 2 DESCRIPTION 1 Using the latest high voltage MESH OVERLAYTM IPAK process, STMicroelectronics has designed an TO-251 advanced family of power MOSFETs with (Suffix "-1") outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge INTERNAL SCHEMATIC DIAGRAM and switching characteristics. APPLICATIONS s SWITCH MODE POWER SUPPLIES (SMPS) s AC ADAPTORS AND BATTERY CHARGERS FOR HANDHELD EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V DS Drain-source Voltage (V GS = 0) 800 V V DGR Drain- gate Voltage (R GS = 20 k) 800 V V GS Gate-source Voltage