ST 2n5320 2n5321 free download

File name 2n5320_2n5321.pdf

2N5320 2N5321 SMALL SIGNAL NPN TRANSISTORS s SILICON EPITAXIAL PLANAR NPN TRANSISTORS s MEDIUM POWER AMPLIFIER s PNP COMPLEMENTS ARE 2N5322 AND 2N5323 DESCRIPTION The 2N5320 and 2N5321 are silicon epitaxial planar NPN transistors in Jedec TO-39 metal case. They are especially intended for high-voltage medium power application in industrial and commercial equipments. TO-39 The complementary PNP types are respectively the 2N5322 and 2N5323 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 2N5320 2N5321 V CBO Collector-Base Voltage (I E = 0) 100 75 V V CEV Collector-Emitter Voltage (V BE = 1.5V) 100 75 V V CEO Collector-Emitter Voltage (I B = 0) 75 50 V V EBO Emitter-Base Voltage (I C = 0) 6 5 V IC Collector Current 1.2 A I CM Collector Peak Current 2 A IB Base Current 1 A o P tot Total Dissipation at T amb = 25 C 1 W P tot Total Dissipation at T c = 25 o C 10 W o T stg , T j Storage and Junction Temperature -65 to 200 C June 1997 1/4 2N5320/2N5321 THERMAL DATA o R thj-case Thermal Resistance Junction-Case Max 17.5 C/W o R thj-amb Thermal Resistance Junction-Ambient Max 175 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CBO Collector Cut-off V CB = 80 V for 2N5320 0.5