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STD3NM50 STD3NM50-1 N-CHANNEL 550V @ Tjmax- 2.5 - 3A DPAK/IPAK Zener-Protected MDmeshTM MOSFET TYPE VDSS RDS(on) ID (@Tjmax) STD3NM50 550V <3 3A STD3NM50-1 550V <3 3A s TYPICAL RDS(on) = 2.5 3 3 HIGH dv/dt AND AVALANCHE CAPABILITIES 2 s 1 1 s IMPROVED ESD CAPABILITY s LOW INPUT CAPACITANCE AND GATE s) CHARGE DPAK IPAK LOW GATE INPUT RESISTANCE TO-252 t( s TO-251 TIGHT PROCESS CONTROL AND HIGH uc s MANUFACTORING YIELDS d ro DESCRIPTION The MDmeshTM is a new revolutionary MOSFET technology that associates the Multiple Drain pro- P INTERNAL SCHEMATIC DIAGRAM cess with the Company's PowerMESHTM horizontal layout. The resulting product has an outstanding low le te so on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Ob Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar completition's products. - (s) APPLICATIONS ct The MDmeshTM family is very suitable for increase the power density of high voltage converters allow- du ing system miniaturization and higher efficiencies. o Pr ABSOLUTE MAXIMUM RATINGS e let Symbol Parameter Value Unit VGS