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File name:2sc3582.pdf
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Mfg:NEC
Model:2sc3582 🔎
Original:2sc3582 🔎
Descr: . Electronic Components Datasheets Active components Transistors NEC 2sc3582.pdf
Group:Electronics > Components > Transistors
Uploaded:02-06-2020
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File name 2sc3582.pdf

DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC3582 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3582 is an NPN epitaxial silicon transistor designed for use in PACKAFE DIMENSIONS low-noise and small signal amplifiers from VHF band to UHF band. Low- in millimeters (inches) 5.2 MAX. noise figure, high gain, and high current capability achieve a very wide (0.204 MAX.) dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface process (DNP process) which is an NEC (0.216 MAX.) proprietary new fabrication technique. 5.5 MAX. FEATURES

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