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STQ1NE10L N-CHANNEL 100V - 0.3 - 1A TO-92 STripFETTM POWER MOSFET TYPE VDSS RDS(on) ID STQ1NE10L 100 V <0.4 1A s TYPICAL RDS(on) = 0.3 s EXCEPTIONAL HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s AVALANCHE RUGGED TECHNOLOGY s LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the latest development of TO-92 TO-92 STMicroelectronis unique "Single Feature SizeTM" (Ammopack) strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s DC MOTOR CONTROL (DISK DRIVES, etc.) s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 100 V VDGR Drain-gate Voltage (RGS = 20 k) 100 V VGS Gate- source Voltage