Philips pbss2515e free download

File name pbss2515e.pdf

PBSS2515E 15 V, 0.5 A NPN low VCEsat (BISS) transistor Rev. 02 -- 21 April 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in an ultra small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS3515E. 1.2 Features I Low collector-emitter saturation voltage VCEsat I High collector current capability IC and ICM I High collector current gain (hFE) at high IC I High efficiency due to less heat generation I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications I DC-to-DC conversion I MOSFET gate driving I Motor control I Charging circuits I Low power switches (e.g. motors, fans) I Portable applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 15 V IC collector current - - 0.5 A ICM peak collector current single pulse; - - 1 A tp 1 ms RCEsat collector-emitter IC = 500 mA; [1] - 300 500 m saturation resistance IB = 50 mA [1] Pulse test: tp 300