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Now downloading free:Toshiba gt10j301 061031

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Descr: . Electronic Components Datasheets Active components Transistors Toshiba gt10j301_061031.pdf
Group:Electronics > Components > Transistors >
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gt10j301_061031.pdfGT10J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J301 HIGH POWER SWITCHING APPLICATIONS Unit: mm MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30s (Max.) Low saturation voltage : VCE (sat) = 2.7V (Max.) FRD included between emitter and collector ABSOLUTE MAXIMUM RATINGS (Ta = 25

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