LGE 2sa719 free download

File name 2sa719.pdf

2SA719/2SA720(PNP) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. COLLECTOR 3. BASE Features For low-frequency power amplification and driver amplification MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 2SA719 -30 V 2SA720 -60 VCEO Collector-Emitter Voltage 2SA719 -25 V 2SA720 -50 Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage 2SA719 V(BR)CBO IC= -10uA, IE=0 -30 V 2SA720 -60 Collector-emitter breakdown voltage 2SA719 V(BR)CEO IC= -10mA ,IB=0 -25 V 2SA720 -50 Emitter-base breakdown voltage V(BR)EBO IE= -10uA, IC=0 -5 V Collector cut-off current ICBO VCB= -20V,IE=0 -0.1 uA Emitter cut-off current IEBO VEB= -4V,IC=0 -0.1 uA hFE(1) VCE=-10V, IC= -150mA 85 340 DC current gain hFE(2) VCE=-10V, IC= -500mA 40 Collector-emitter saturation voltage VCE(sat) IC=-300mA, IB= -30mA -0.6 V Base-emitter saturation voltage VBE(sat) IC= -300mA, I