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STD4NB40 N - CHANNEL ENHANCEMENT MODE PowerMESHTM MOSFET PRELIMINARY DATA TYPE V DSS R DS(on) ID STD4NB40 400 V < 1.8 3.7 A s TYPICAL RDS(on) = 1.47 s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED 3 s VERY LOW INTRINSIC CAPACITANCES 2 3 s GATE CHARGE MINIMIZED 1 1 DESCRIPTION Using the latest high voltage MESH OVERLAYTM IPAK DPAK process, SGS-Thomson has designed an TO-251 TO-252 advanced family of power MOSFETs with (Suffix "-1") (Suffix "T4") outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge INTERNAL SCHEMATIC DIAGRAM and switching characteristics. APPLICATIONS s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t V DS Drain-source Voltage (V GS = 0) 400 V V DGR Drain- gate Voltage (R GS = 20 k) 400 V V GS Gate-source Voltage