ST st13003n free download

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ST13003N High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Very high switching speed Application 3 2 Compact fluorescent lamps (CFLs) 1 Description SOT-32 The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge Figure 1. Internal schematic diagram termination to enhance switching speeds while maintaining the wide RBSOA. Table 1. Device summary Order code Marking Package Packaging ST13003N 13003N SOT-32 BAG February 2010 Doc ID 15759 Rev 2 1/9 www.st.com 9 Electrical ratings ST13003N 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VBE = 0) 700 V VCEO Collector-emitter voltage (IB = 0) 400 V VEBO Collector-base voltage (IC = 0) 9 V IC Collector current 1 A ICM Collector peak current (tP < 5 ms) 2 A IB Base current 0.5 A IBM Base peak current (tP < 5 ms) 1 A PTOT Total dissipation at Tc = 25