Samsung ksp5179 free download

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KSP5179 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 12 V Emitter-Base Voltage VEBO 2.5 V Collector Current IC 50 mA PC 200 mW Collector Dissipation (T A=25 ) Derate above 25 1.14 mW/ Collector Dissipation (T C=25 ) mW PC 300 Derate above 25 mW/ 1.71 Junction Temperature Storage Temperature TJ T STG 150 -55~150 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA=25 ) Characteristic Symbol Test Conditions Min Max Unit Collector-Emitter Sustaining Voltage VCEO (sus) IC=3mA, IB=0 12 V Collector-Base Breakdown Voltage BVCBO IC=0.001mA, IE=0 20 V } Emitter-Base Breakdown Voltage BVEBO IE=0.01, IC=0 2.5 V } Collector Cut-off Current ICBO VCB=15V, IE=0 0.02 VCB=15V, IE=0, Ta=150 1 DC Current Gain hFE VCB=1V, IC=3mA 25 250 Collector-Emitter Saturation Voltage VCE (sat) IC=10mA,