ST am1214 free download

File name am1214.pdf

AM1214-100 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS . . REFRACTORY/GOLD METALLIZATION PRELIMINARY DATA . . EMITTER SITE BALLASTED LOW THERMAL RESISTANCE . . INPUT/OUTPUT MATCHING OVERLAY GEOMETRY . METAL/CERAMIC HERMETIC PACKAGE POUT = 100 W MIN. WITH 6.0 dB GAIN .400 x .500 2LFL (S038) hermetically sealed ORDER CODE BRANDING AM1214-100 1214-100 DESCRIPTION PIN CONNECTION The AM1214-100 device is a high power Class C transistor specifically designed for L-Band Radar pulsed driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles, and tempera- tures and is capable of withstanding 3:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bond- ing techniques ensure high reliability and product consistency. AM1214-100 is supplied in the grounded IMPACTM 1. Collector 3. Emitter hermetic metal/ceramic package with internal 2. Base 4. Base input/output matching structures. ABSOLUTE MAXIMUM RATINGS (T case = 25