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STE48NM50 N-CHANNEL 550V @ Tjmax - 0.08 - 48A ISOTOP MDmeshTM MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS(on) ID (@Tjmax) STE48NM50 550V < 0.1 48 A s TYPICAL RDS(on) = 0.08 s HIGH dv/dt AND AVALANCHE CAPABILITIES s 100% AVALANCHE TESTED s LOW INPUT CAPACITANCE AND GATE CHARGE s LOW GATE INPUT RESISTANCE s TIGHT PROCESS CONTROL AND HIGH ISOTOP MANUFACTURING YIELDS DESCRIPTION The MDmeshTM is a new revolutionary MOSFET technology that associates the Multiple Drain pro- Figure 2: Internal Schematic Diagram cess with the Company's PowerMESHTM horizon- tal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip tech- nique yields overall dynamic performance that is significantly better than that of similar competi- tion's products. APPLICATIONS The MDmeshTM family is very suitable for increas- ing power density of high voltage converters allow- ing system miniaturization and higher efficiencies. Table 2: Order Codes SALES TYPE MARKING PACKAGE PACKAGING STE48NM50 E48NM50 ISOTOP TUBE Rev. 2 March 2005 1/9 STE48NM50 Table 3: Absolute Maximum ratings Symbol Parameter Value Unit VGS Gate- source Voltage