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IRF820 N-channel 500V - 2.5 - 4A TO-220 PowerMeshTMII MOSFET General features Type VDSS RDS(on) ID IRF820 500V <0.3 4A Extremely high dv/dt capability 100% avalnche tested 3 2 1 New high voltage benchmark s) TO-220 Gate charge minimized t( Description d uc ro The PowerMESHTMII is the evolution of the first generation of MESH OVERLAYTM. The layout refinements introduced greatly improve the P Ron*area figure of merit while keeping the device at the leading edge for what concerns switching te Internal schematic diagram le so speed, gate charge and ruggedness. Applications Switching application - Ob ct (s) o du e Pr let Order codes o O bs Part number IRF820 Marking IRF820 Package TO-220 Packaging Tube June 2006 Rev 3 1/12 www.st.com 12 Contents IRF820 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (