KEC kmb6d0np40qa free download

File name kmb6d0np40qa.pdf

SEMICONDUCTOR KMB6D0NP40QA TECHNICAL DATA N and P-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche H characteristics. It is mainly suitable for Back-light Inverter. T D P G L FEATURES N-Channel A : VDSS=40V, ID=6A. DIM MILLIMETERS : RDS(ON)=31m (Max.) @ VGS=10V A _ 4.85 + 0.2 B1 _ 3.94 + 0.2 : RDS(ON)=45m (Max.) @ VGS=4.5V 8 5 B2 _ 6.02 + 0.3 P-Channel D _ 0.4 + 0.1 B1 B2 G 0.15+0.1/-0.05 : VDSS=-40V, ID=-5A. 1 H _ 1.63 + 0.2 4 : RDS(ON)=45m (Max.) @ VGS=-10V