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KSA643(PNP) TO-92 Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Collector dissipation Complement to KSD261 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters) IC Collector Current -Continuous -500 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -100uA,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -10mA , IB=0 -20 V Emitter-base breakdown voltage V(BR)EBO IE= -10uA, IC=0 -5 V Collector cut-off current ICBO VCB= -25 V , IE=0 -0.2 uA Emitter cut-off current IEBO VEB= -3 V , IC=0 -0.2 uA DC current gain hFE* VCE= -1 V, IC= -100mA 40 400 Collector-emitter saturation voltage VCE(sat)* IC= -500mA, IB=- 50mA -0.4 V Base-emitter saturation voltage VBE(sat)* IC= -500mA, IB=- 50mA -1.3 V * PULSE TEST CLASSIFICATION OF hFE Rank R O Y G Range 40-80 70-140 120-240 200-400 KSA643(PNP)