Samsung ksc5039 free download

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KSC5039 NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH TO-220 SWITCHING APPLICATION ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 800 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 7 V Collector Current (DC) IC 5 A Collector Current (Pulse) IC 10 A Base Current IB 3 A ) Collector Dissipation ( T C=25 PC 70 W Junction Temperature TJ 150 1.Base 2.Collector 3.Emitter Storage Temperature T STG -65 ~ 150 ELECTRICAL CHARACTERISTICS (T C =25) Characteristic Symbol Test Conditions Min Typ Max Unit Collector-Base Breakdown Voltage BVCBO IC = 1mA, IE = 0 800 V Collector-Emitter Breakdown Voltage BVCEO IC = 5mA, IB = 0 400 V Emitter-Base Breakdown Voltage BVEBO IC = 1mA, IC=0 7 Collector Cutoff Current ICBO VCB = 500V, IE = 0 10 uA Emitter Cutoff Current IEBO VEB = 7V, IC = 0 10 uA %DC Current Gain hFE VCE = 5V, IC = 0.3A 10 %Collector Emitter Saturation Voltage VCE(sat) IC = 2.5A, IB = 0.5A 1.5 V %Base Emitter Saturation Voltage VBE(sat) IC = 2.5A, IB = 0.5A 2.0 V Current Gain Bandwidth Product fT VCE = 5V, IC = 0.1A 10 MHz Output Capacitance COB VCB = 10V , f = 1MHz 40 pF Turn On Time tON IB1 = -IB2 = 0.5A 1 us Storage Time tSTG IC = 2.5A 3 us Fall Time tF VCC =150V 0.8 us % Plus test : PW=300 I, Duty Cycle=2% Pulsed KSC5039 NPN SILICON TRANSISTOR KSC5039 NPN SILICON TRANSISTOR