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STH60N10/FI STW60N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS R DS(on) ID STH60N10 100 V < 0.025 60 A STH60N10FI 100 V < 0.025 36 A TO-247 STW60N10 100 V < 0.025 60 A s TYPICAL RDS(on) = 0.02 3 s AVALANCHE RUGGED TECHNOLOGY 2 s 100% AVALANCHE TESTED 1 s REPETITIVE AVALANCHE DATA AT 100oC s LOW GATE CHARGE s VERY HIGH CURRENT CAPABILITY s 175oC OPERATING TEMPERATURE 3 3 2 2 s APPLICATION ORIENTED 1 1 CHARACTERIZATION TO-218 ISOWATT218 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS INTERNAL SCHEMATIC DIAGRAM s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STH/STW60N10 STH60N10FI V DS Drain-source Voltage (V GS = 0) 100 V V DGR Drain- gate Voltage (R GS = 20 k) 100 V V GS Gate-source Voltage