Microsemi 2n5795-96 free download

File name 2n5795-96.pdf

TECHNICAL DATA PNP DUAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/496 Devices Qualified Level JAN 2N5796 2N5795 JANTX 2N5796U JANTXV MAXIMUM RATINGS Ratings Symbol Value Units Collector-Emitter Voltage VCEO 60 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current 600 mAdc TO-78* IC (1) (2) One Both Section Sections Total Power Dissipation @ TA = +250C PT 0.5 0.6 W 0 Operating & Storage Junction Temperature Range TJ, Tstg -65 to +175 C 1) Derate linearly 2.86 mW/0C for TA +250C 2) Derate linearly 3.43 mW/0C for TA +250C 6 PIN SURFACE MOUNT* *See MILPRF19500/496 for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V(BR)CEO 60 Vdc IC = 10 mAdc Collector-Base Cutoff Current VCB = 50 Vdc ICBO