KEC kma4d5p20x free download

File name kma4d5p20x.pdf

SEMICONDUCTOR KMA4D5P20X TECHNICAL DATA P-CH Trench MOSFET General Description It s mainly suitable for battery pack or power management in cell phone, and PDA. FEATURES VDSS=-20V, ID=-4.5A. Drain-Source ON Resistance. : RDS(ON)=60m (Max.) @ VGS=-4.5V,.ID=-4.5A : RDS(ON)=110m (Max.) @ VGS=-2.5V,.ID=-3.3A Super High Dense Cell Design for Extremely Low RDS(ON) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS 12 V DC ID * 4.5 Drain Current A Pulsed IDP* 16 Continuous Source Current IS -1.3 A Ta=25 2.0 Drain Power Dissipation PD * W Ta=70 1.3 Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Thermal Resistance, Junction to Ambient RthJA * 62.5 /W * : Surface Mounted on 1 1 FR4 Board, t 5sec. 2007. 3. 22 Revision No : 2 1/5 KMA4D5P20X ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage BVDSS ID=-250 A, VGS=0V -20 - - V VGS=0V, VDS=-20V - - -1 Drain Cut-off Current IDSS A VGS=0V,VDS=-16V, Tj=70 (Note - - -5 Gate Threshold Voltage Vth VDS=VGS, ID=-250 A -0.6 - -1.3 V Gate Leakage Current IGSS VGS= 12V, VDS=0V - - 100 nA VGS=-4.5V, ID=-4.5A (Note 2) - 49 60 Drain-Source ON Resistance RDS(ON) m VG