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2SC388(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features TV final pictureif amplifier applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Emitter Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Continuous 50 mA Dimensions in inches and (millimeters) Pc Collector Power dissipation 300 mW Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=10A,IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO Ic=5mA,IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=10A,IC=0 4 V Collector cut-off current ICBO VCB=30V,IE=0 0.1 A Emitter cut-off current IEBO VEB=3V,IC=0 0.1 A DC current gain hFE(1) VCE=12.5V,IC=12.5mA 20 200 Collector-emitter saturation voltage VCE(sat) IC=15mA,IB=1.5mA 0.2 V Base-emitter saturation voltage VBE(sat) IC=15mA,IB=1.5mA 1.2 V Transition frequency fT VCE=12.5V,IC=12.5mA 300 MHz Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 0.8 2 pF VCC=12.5V,IE=-12.5mA, Power Gain Gpe 28 36 dB f=45MHZ 2SC38