Philips 2n7002e free download

File name 2n7002e.pdf

2N7002E N-channel TrenchMOS FET Rev. 03 -- 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features s Logic level threshold compatible s Very fast switching s Surface-mounted package s TrenchMOS technology 1.3 Applications s Logic level translator s High-speed line driver 1.4 Quick reference data s VDS 60 V s ID 385 mA s RDSon 3 s Ptot 0.83 W 2. Pinning information Table 1: Pinning Pin Description Simplified outline Symbol 1 gate (G) 3 D 2 source (S) 3 drain (D) G 1 2 mbb076 S SOT23 Philips Semiconductors 2N7002E N-channel TrenchMOS FET 3. Ordering information Table 2: Ordering information Type number Package Name Description Version 2N7002E TO-236AB plastic surface-mounted package; 3 leads SOT23 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage 25