Philips bf556a bf556b bf556c free download

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BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Rev. 03 -- 5 August 2004 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. CAUTION This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken during transport and handling. MSC895 1.2 Features s Low leakage level (typ. 500 fA) s High gain s Low cut-off voltage. 1.3 Applications s Impedance converters in e.g. electret microphones and infrared detectors s VHF amplifiers in oscillators and mixers. 1.4 Quick reference data Table 1: Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source - -