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B772S Transistor(PNP) 1. EMITTER TO-92 2. COLLECTOR 3 BASE Features Low speed switching MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V Dimensions in inches and (millimeters) IC Collector Current -Continuous -3 A PC Collector Power Dissipation 0.625 W RJA Thermal Resistance, junction to Ambient 500 /W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100A ,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -10mA , IB=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE= -100A,IC=0 -6 V Collector cut-off current ICBO VCB= -40V, IE=0 -1 A Collector cut-off current ICEO VCE=-30V, IB=0 -10 A Emitter cut-off current IEBO VEB=-6V, IC=0 -1 A DC current gain hFE VCE= -2V, IC= -1A 60 400 Collector-emitter saturation voltage VCE(sat) IC=-2A, IB= -0.2A -0.5 V Base-emitter saturation voltage VBE(sat) IC=-2A, IB= -0.2A -1.5 V VCE= -5V, IC=-0.1A Transition frequency fT 50 80 MHz