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2SC2717(NPN) TO-92 Bipolar Transistors 1. BASE TO-92 2. EMITTER 3. COLLECTOR Features High Gain: Gpe =33 dB ( Typ. ) ( f =45MHZ) Good Linearity of hFE. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 4 V Dimensions in inches and (millimeters) IC Collector Current -Continuous 50 mA PC Collector Power Dissipation 300 mW Tj Junction Temperature 125 Tstg Storage Temperature -55-125 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100A,IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100A,IC=0 4 V Collector cut-off current ICBO VCB=30V,IE=0 0.1 A Emitter cut-off current IEBO VEB=3V,IC=0 0.1 A DC current gain hFE VCE=12.5V,IC=12.5mA 40 240 Collector-emitter saturation voltage VCE(sat) IC=15mA,IB=1.5mA 0.2 V Base-emitter saturation voltage VBE(sat) IC=15mA,IB=1.5mA 1.5 V Transition frequency fT VCE=12.5V,IC=12.5mA 300 MHz Collector output capacitance Cob VCB=10V,IE=0,f=30MHz 0.8 2.0 pF .rbb' Collector-base time constant CC VCB=10V,IE=-1mA,f=30MHz 25 ps Power gain (fig.) Gpe VCC=12.5V,IE=-12.5mA,f=45MHz 28 36 dB