Philips pbhv9050t free download

File name pbhv9050t.pdf

PBHV9050T 500 V, 150 mA PNP high-voltage low VCEsat (BISS) transistor Rev. 01 -- 16 September 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement: PMBTA45. 1.2 Features I High voltage I Low collector-emitter saturation voltage VCEsat I High collector current capability IC and ICM I High collector current gain (hFE) at high IC I AEC-Q101 qualified 1.3 Applications I Electronic ballasts I LED driver for LED chain module I LCD backlighting I Automotive motor management I Flyback converters I Hook switch for wired telecom I Switch Mode Power Supply (SMPS) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCESM collector-emitter peak VBE = 0 V - - -500 V voltage VCEO collector-emitter voltage open base - - -500 V IC collector current - - -0.15 A hFE DC current gain VCE = -10 V; 80 160 300 IC = -50 mA NXP Semiconductors PBHV9050T 500 V, 150 mA PNP high-voltage low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 base 3 3 2 emitter 3 collector 1 1 2 2 sym013 3. Ordering information Table 3. Ordering information Type number Package