KEC 2n5551 free download

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SEMICONDUCTOR 2N5551 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C FEATURES A High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V N DIM MILLIMETERS E A 4.70 MAX K Low Leakage Current. G B 4.80 MAX D C 3.70 MAX : ICBO=50nA(Max.), VCB=120V J D 0.45 E 1.00 Low Saturation Voltage F 1.27 : VCE(sat)=0.2V(Max.), IC=50mA, IB=5mA G 0.85 H 0.45 Low Noise : NF=8dB (Max.) H J _ 14.00 + 0.50 F F K 0.55 MAX L 2.30 M 0.45 MAX N 1.00 C