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Electronic components, integrated circuits, semiconductor - datasheets and schematics

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File name:	ne55410gr.pdf [preview ne55410gr]
Size:	647 kB
Extension:	pdf
Mfg:	NEC
Model:	ne55410gr 🔎
Original:	ne55410gr 🔎
Descr:	. Electronic Components Datasheets Active components Transistors NEC ne55410gr.pdf
Group:	Electronics > Components > Transistors
Uploaded:	11-06-2020
User:	Anonymous
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File name ne55410gr.pdf DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA's. This product has two different FET's on one die manufactured using our NEWMOS technology (our WSi gate lateral MOS FET), and its nitride surface passivation and quadruple layer aluminum silicon metalization offer a high degree of reliability. FEATURES

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