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BFY50/51 MEDIUM POWER AMPLIFIER DESCRIPTION The BFY50 and BFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are intended for general purpose linear and switching applications. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit BFY50 BFY51 V CBO Collector-Base Voltage (IE = 0) 80 60 V V CEO Collector-Emitter Voltage (I B = 0) 35 30 V V EBO Emitter-Base Voltage (I C = 0) 6 V IC Collector Current 1 A I CM Collector Peak Current (tp < 5 ms) 1.5 A o P t ot Total Dissipation at T amb 25 C 0.8 W at T case 25 o C 5 W o T stg St orage Temperature -65 to 200 C o Tj Max. Operating Junction Temperature 200 C November 1997 1/5 BFY50/BFY51 THERMAL DATA o R t hj-ca se Thermal Resistance Junction-Case Max 35 C/W o R t hj- amb Thermal Resistance Junction-Ambient Max 218 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it I CBO Collector Cut-off for BFY50 Current (IE = 0) V CB = 60 V 50 nA o V CB = 60 V T ca s e = 100 C 2.5