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STW7NB80 N - CHANNEL 800V - 1.6 - 6.5A - TO-247 PowerMESHTM MOSFET PRELIMINARY DATA TYPE V DSS R DS(on) ID STW7NB80 800 V < 1.9 6.5 A s TYPICAL RDS(on) = 1.6 s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED 3 DESCRIPTION 2 1 Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with TO-247 outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge INTERNAL SCHEMATIC DIAGRAM and switching characteristics. APPLICATIONS s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE s HIGH CURRENT, HIGH SPEED SWITCHING ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V DS Drain-source Voltage (V GS = 0) 800 V V DGR Drain- gate Voltage (R GS = 20 k) 800 V V GS Gate-source Voltage